Semiconductor Technology
Halbleitertechnologie
6 LPWiSeEN
Voraussetzungen
Empfohlen, im Wortlaut
• Knowledge of semiconductor physics based on the bachelor degree in physics, in particular knowledge of the content of module 11868: Allgemeine Physik IV (Festkörperphysik) • Knowledge of the functioning and structure of electronic components, such as knowledge of the content of module 12364: Elektronische Bauelemente und Grundschaltungen • Knowledge of solid-state physics or electrical engineering at a level corresponding to the first four semesters of a Bachelor's degree in physics or electrical engineering
Inhalte
• Historical overview of the development of semiconductor technology and semiconductor market • Semiconductor physics basics • Basics of integrated semiconductor devices (passives, diode, bipolartransistor, FET) • Si crystal lattice, crystal growth, wafer production, doping and contamination of wafer material • Oxidation • Doping by diffusion and implantation • Layer deposition and Epitaxial growth of crystalline Si(Ge) layers on the substrate • Structuring by lithography, etching process • Cleaning and planarization processes • Silicon on insulator (SOI) • Diagnostics, process control & Metrology for Si-based semiconductor processes • Outlook on future semiconductor technologies • Excursion to visit semiconductor FAB at IHP-Leibniz Institute for High Performance Microelectronics
Lernziele
After successfully completing the module, students have learned the fundamentals of semiconductor physics, the topology and functionality of key semiconductor devices and seminconductor munufacturing processes to realize integrated silicon-based circuits. They have gained an insight into the adjacent fields of material and device diagnostics, manufacturing process control and an overview of technological trends in the semiconductor industry. The knowledge gained from this course enables the students to evaluate given semiconductor technologies with regard to their suitability for apllication, e.g. in electronic circuits and systems.
Prüfungsleistung
Prerequisite: • Successful elaboration and presentation of Homework / Study, 10-15 min. Final module examination: • Oral examination, 45 min. OR • Written examination, 120 min. (for large numbers of participants) In the first lecture it will be announced, wheter the examination will be organised in written or oral form.
Literatur (6)
- S.M. Sze, „Physics of Semiconductor Devices“, John Wiley & Sons, 3rd Edition, 2008
- R. Doering, Y. Nishi, “Handbook of Semiconductor Manufacturing Technology”, CRC Press, 2nd Edition, 2008
- P.R. Gray, P.J. Hurst, S.H. Lewis, R.G. Meyer, „Analysis and Design of Analog Integrated Circuits“, John Whiley & Sons, 4th Edition, 2001
- S. Dimirijev, „Understanding Semiconductor Devices“, Oxford University Press, 2nd Edition
- J.D. Cressler, G. Niu, „Silicon-Germanium Heterojunction Bipolar Transistors“, Artech House, 2003
- D. A. Neamen, „Semiconductor Physics and Devices“, Mc Graw Hill, Fourth Edition, 2012
Bemerkungen
• Study programme Physics M.Sc.: Compulsory elective module in complex „Physical Specialization with Experimental Focus“, topic area „Nanophysics“ • Study programme Informatik M.Sc.: Compulsory elective module in minor „Maschinenbau/Elektrotechnik“ • Study programme Micro- and Nanoelectronics M.Sc.: Compulsory elective module in complex „Technology and Devices“
Quelle: Modulbeschreibung der BTU · abgerufen 28.09.2026Original