Advanced Micro- and Nanoelectronic Devices
Moderne Bauelemente der Mikro- und Nanoelektronik
6 LPunregelmäßigEN
Voraussetzungen
Empfohlen, im Wortlaut
Knowledge of topics of physics at a level corresponding to the first four semesters of a Bachelor’s degree in physics or corresponding to the level of a Bachelor’s degree in electrical engineering.
Inhalte
Lectures will address advancements such as More Moore and functional extension of complex semiconductor technologies as well as novel device concepts such as FinFET, multi-bridge-MOS, etc. • Development/History of semiconductor technologies • Process background • MOS device evolution and functionality • Large scale integration technologies – from Denard scaling towards sub-10nm FET technologies • Integration methods (monolithic, hybrid, quasi-monolithic)
Lernziele
After successfully completing the module, students are acquainted with background for state-of-art microelectronic technologies and related integration techniques for advanced systems. The students are able to understand relations, dependencies and challenges for the continuous improvement of electronic systems.
Prüfungsleistung
• Oral exam, 45 minutes
Literatur (1)
- Springer Handbook of Semiconductor Devices (2023), Editors: Massimo Rudan, Rossella Brunetti, Susanna Reggiani
Bemerkungen
• Study programme Micro- and Nanoelectronics M.Sc.: Compulsory elective module in complex „Technology and Devices"
Quelle: Modulbeschreibung der BTU · abgerufen 29.09.2026Original